Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-20
2000-07-25
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438182, 438195, 438211, 438277, 438283, H01L 21336
Patent
active
060936045
ABSTRACT:
A memory device and a method of manufacturing the same in accordance with the present invention has an improved writing and erasing efficiency and an improved reliability. The memory device includes a first conductivity type substrate having second conductivity type source and drain regions spaced apart from each other. A source electrode having a T-shaped rail structure is formed in contact with the source region, and a drain electrode having a T-shaped rail structure is formed in contact with the drain region. An I-shaped floating gate is formed on the substrate between the source electrode and the drain electrode with a control gate formed on the floating gate.
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Guerrero Maria
Jr. Carl Whitehead
LG Semicon Co. Ltd.
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