Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-26
2007-06-26
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S685000, C257SE21168
Reexamination Certificate
active
10657505
ABSTRACT:
An atomic layer deposition method is used to deposit a TiN or TiSiN film having a thickness of about 50 nm or less on a substrat. A titanium precursor which is tetrakis(dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), or Ti{OCH(CH3)2}4avoids halide contamination from a titanium halide precursor and is safer to handle than a titanium nitrate. After a monolayer of the titanium precursor is deposited on a substrate, a nitrogen containing reactant is introduced to form a TiN monolayer which is followed by a second purge. For TiSiN, a silicon source gas is fed into the process chamber after the TiN monolayer formation. The process is repeated several times to produce a composite layer comprised of a plurality of monolayers that fills a contact hole. The ALD method is cost effective and affords an interconnect with lower impurity levels and better step coverage than conventional PECVD or CVD processes.
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Hsieh Ching-Hua
Shue Shau-Lin
Tsai Ming-Hsing
Wu Chii-Ming
Geyer Scott B.
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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