Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-14
2008-11-11
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S256000, C438S397000, C438S399000
Reexamination Certificate
active
07449383
ABSTRACT:
In a method of manufacturing a capacitor and a method of manufacturing a dynamic random access memory device, an insulating layer covering an upper portion of a conductive layer may be provided with an ozone gas so as to change the property of the upper portion of the insulating layer. The upper portion of the insulating layer may be chemically removed to expose the upper portion of the conductive layer. The exposed upper portion of the conductive layer may be removed so as to transform the conductive layer into a lower electrode. The remaining portion of the insulating layer may be removed, and an upper electrode may be formed on the lower electrode.
REFERENCES:
patent: 5686337 (1997-11-01), Koh et al.
patent: 5753547 (1998-05-01), Ying
patent: 5817555 (1998-10-01), Cho
patent: 6069038 (2000-05-01), Hashimoto et al.
patent: 6248625 (2001-06-01), Hirota et al.
patent: 6255151 (2001-07-01), Fukuda et al.
patent: 6258662 (2001-07-01), Wang et al.
patent: 08-125021 (1996-05-01), None
patent: 11-008233 (1999-01-01), None
patent: 2001-053251 (2001-02-01), None
patent: 1020010003253 (2001-01-01), None
patent: 10-2003-0049843 (2003-06-01), None
patent: 1020030057640 (2003-07-01), None
patent: 1020040001886 (2004-01-01), None
patent: 1020040046704 (2004-06-01), None
patent: 10-0505675 (2005-07-01), None
Kim Bong-Cheol
Lee Jung-Hyeon
Park Se-Young
Yoon Kwang-Sub
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Thomas Toniae M.
Wilczewski M.
LandOfFree
Method of manufacturing a capacitor and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a capacitor and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a capacitor and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4050722