Method of making vertical transistor structures having...

Details Method of making vertical transistor structures having... Method of making vertical transistor structures having...

2006-07-28

2009-02-10

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S329000, C257S401000, C257SE29262, C257SE21410, C438S156000

Reexamination Certificate

active

07488651

ABSTRACT:
The present inventions include a vertical transistor formed by defining a channel length of the vertical-surrounding-gate field effect transistor with self-aligning features. The method provides process steps to define the transistor channel length and recess silicon pillars used to form the vertical-surrounding gate field effect transistor structure for use in the manufacture of semiconductor devices.

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