Method of making tungsten local interconnect using a silicon nit

Details Method of making tungsten local interconnect using a silicon nit Method of making tungsten local interconnect using a silicon nit

1997-07-30

1998-09-15

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438618, 438637, 438653, H01L 21336

Patent

active

058077790

ABSTRACT:
A process for fabricating MOSFET devices, using a local interconnect structure, and silicon nitride capped, self-aligned contact openings, has been developed. The process features the creation of self-aligned contact openings, exposing specific source and drain regions. After deposition of a composite insulator layer, a second opening is formed in the composite insulator layer, again exposing various elements including the previously opened, specific source and drain regions. The formation of a local interconnect structure, filling the second opening, contacts, as well as interconnects, the specific source and drain regions.

REFERENCES:
patent: 5075762 (1991-12-01), Kondo et al.
patent: 5223456 (1993-06-01), Malwah
patent: 5391520 (1995-02-01), Chen et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5451545 (1995-09-01), Ramaswami et al.
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5483104 (1996-01-01), Godnho et al.

Affiliated with

Also associated with

Rating

Method of making tungsten local interconnect using a silicon nit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making tungsten local interconnect using a silicon nit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making tungsten local interconnect using a silicon nit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-86593