Method of making substrates for nitride semiconductor devices

Details Method of making substrates for nitride semiconductor devices Method of making substrates for nitride semiconductor devices

2007-03-06

2007-03-06

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

10995446

ABSTRACT:
For fabricating an LED substrate with minimal dislocations in its nitride semiconductor layers, GaN is epitaxially grown into a first formative layer overlying a multilayered buffer region on a silicon substrate. A second formative layer is then formed on the first formative layer by epitaxially growing AlN, at such a rate that interstices are created in the first formative layer by the etching action of the reactor gases in the early stages of the fabrication of the second formative layer. Then the second formative layer is etched away from over the intersticed first formative layer, leaving the interstices open. Then a filler layer of GaN is epitaxially grown on the intersticed first formative layer in interfitting engagement therewith. Dislocations are greatly reduced in active semiconductor layers formed subsequently on the filler layer.

REFERENCES:
patent: 10-312971 (1998-11-01), None
patent: 2002-343728 (2002-11-01), None
patent: 2003-059948 (2003-02-01), None

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