Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-01
2005-11-01
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S217000, C438S275000, C438S279000
Reexamination Certificate
active
06960510
ABSTRACT:
A method of forming a structure having sub-lithographic dimensions is provided. The method includes: forming a chamfered mandrel on a substrate, the mandrel having an angled surface; and performing an angled ion implantation to obtain an implanted shadow region in the substrate, the implanted shadow mask having at least one sub-lithographic dimension.
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Deshpande Sadanand V.
Furukawa Toshiharu
Horak David V.
Natzle Wesley C.
Sekiguchi Akihisa
Pham Long
Rao Shrinivas H.
Sabo William D.
Schmeiser Olsen & Watts
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