Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-03
2011-05-03
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21249
Reexamination Certificate
active
07935604
ABSTRACT:
A method of forming a small geometry feature. The method includes forming a source layer on a top surface of a substrate; forming a mandrel on a top surface of the source layer, the mandrel having a sidewall; sputtering material from the source layer onto the sidewall of the mandrel to form a sidewall layer on the sidewall of the mandrel; and removing the mandrel. Also methods to forming wires and field effect transistors of integrated circuits.
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Adkisson James William
Gambino Jeffrey Peter
Leidy Robert Kenneth
Lepuschenko Walter Victor
Meatyard David Alan
International Business Machines - Corporation
Kotulak Richard M.
Le Thao P.
Schmeiser Olsen & Watts
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