Method of making semiconductor device using a novel...

Details Method of making semiconductor device using a novel... Method of making semiconductor device using a novel...

2007-05-08

2007-05-08

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S006000, C438S098000, C438S128000, C438S411000, C438S453000, C438S523000, C438S533000, C438S598000, C257S276000, C257S522000

Reexamination Certificate

active

10105431

ABSTRACT:
A method and apparatus are provided an interconnect cladding layer. In one embodiment, a first sacrificial layer is deposited over a substrate and patterned. In the vias created during the patterning operation, a conductive material is placed to create conductive interconnects. After planarizing the conductive material, the sacrificial layer is removed leaving the interconnect exposed. A cladding layer is then deposited over the conductive material.

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