Method of making intermetal dielectric layers having a low diele

Details Method of making intermetal dielectric layers having a low diele Method of making intermetal dielectric layers having a low diele

1999-09-10

2000-09-26

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438761, 438786, 438787, 438788, H01L 2348, H01L 2952

Patent

active

061242160

ABSTRACT:
A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.

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