Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices

Details Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices Method of making high-voltage bipolar/CMOS/DMOS (BCD) devices

2005-02-01

2005-02-01

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S154000, C438S206000

Reexamination Certificate

active

06849491

ABSTRACT:
A process for making a integrated circuits of different typed is described wherein sequence of mask steps is applied to a substrate or epitaxial layer of p-type material. The sequence is chosen from a predefined common set of mask steps according to the particular type of integrated circuit to be fabricated. In this way, various types of integrated circuit can be fabricated in a most efficient manner.

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“A-BCD: an economic 100V RESURF silicon-on-insulator BCD technology for consumer and automotive applications”, Jacob A. van der Pol, et al.

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