Method of making flash memory cells and peripheral circuits...

Details Method of making flash memory cells and peripheral circuits... Method of making flash memory cells and peripheral circuits...

2010-12-28

2011-11-01

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C438S216000, C438S257000, C257S311000, C257SE29309

Reexamination Certificate

active

08048746

ABSTRACT:
An integrated circuit includes flash memory cells, and peripheral circuitry including low voltage transistors (LVT) and high voltage transistors (HVT). The integrated circuit includes a tunnel barrier layer comprising SiON, SiN or other high-k material. The tunnel barrier layer may comprise a part of the gate dielectric of the HVTs. The tunnel barrier layer may constitute the entire gate dielectric of the HVTs. The corresponding tunnel barrier layer may be formed between or upon shallow trench isolation (STIs). Therefore, the manufacturing efficiency of a driver chip IC may be increased.

REFERENCES:
patent: 2009/0173989 (2009-07-01), Yaegashi

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