Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

2007-06-12

2007-06-12

Niebling, John F. (Department: 2812)

Static information storage and retrieval

Read/write circuit

Differential sensing

C438S276000, C438S277000, C438S278000

Reexamination Certificate

active

09685361

ABSTRACT:
A method for fabricating a semiconductor memory device is described. An insulating layer is disposed on a semiconductor substrate. A matrix of semiconductor memory elements is disposed in the substrate. The semiconductor memory elements include a plurality of contact holes formed in the insulating layer. One contact hole is formed in the insulating layer for each of the semiconductor memory elements. A bit definition region is disposed in the semiconductor substrate underneath each of the contact holes. A contact plug is disposed in each of the contact holes and is in electrical contact with the bit definition region. The bit definition region is configured such that a contact resistance between the semiconductor substrate and the contact plug defines a bit to be stored in the semiconductor memory elements, An evaluation circuit is connected to and evaluates the contact resistance of the semiconductor memory elements.

REFERENCES:
patent: 5170227 (1992-12-01), Kaneko et al.
patent: 5563098 (1996-10-01), Kuo et al.
patent: 5620926 (1997-04-01), Itoh
patent: 5621247 (1997-04-01), Hirao et al.
patent: 5753553 (1998-05-01), Hikawa et al.
patent: 5960283 (1999-09-01), Sato
patent: 6030871 (2000-02-01), Eitan
patent: 6200861 (2001-03-01), Wu et al.
patent: 6201282 (2001-03-01), Eitan
patent: 6221723 (2001-04-01), Kunitou
patent: 40 08 883 (1990-09-01), None
patent: 59 067 666 (1984-04-01), None

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