Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-13
2007-11-13
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S387000, C257S296000, C257SE21010
Reexamination Certificate
active
09249254
ABSTRACT:
A method for fabricating an improved metal-insulator-metal capacitor is achieved. An insulating layer is provided overlying conducting lines on a semiconductor substrate. Via openings through the insulating layer to the conducting lines are filled with metal plugs. A first metal layer is deposited overlying the insulating layer and the metal plugs. A capacitor dielectric layer is deposited overlying the first metal layer wherein capacitor dielectric layer is deposited as a dual layer, each layer deposited within a separate chamber whereby pinholes are eliminated. A second metal layer and a barrier metal layer are deposited overlying the capacitor dielectric layer. The second metal layer and the barrier metal layer are patterned to form a top plate electrode. Thereafter, the capacitor dielectric layer and the first metal layer are patterned to form a bottom plate electrode completing fabrication of a metal-insulator-metal capacitor.
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Chen Chun-Hon
Chung Jau-Yuann
Ho Yen-Shih
Tao Hun-Jan
Coleman W. David
Taiwan Semiconductor Manufacturing Co., ltd.
Thomas Kayden Horstemeyer & Risley
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