Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-02-08
2000-04-04
Dang, Trung
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438381, 438382, 438786, H01L 218234
Patent
active
060460806
ABSTRACT:
The present invention relates to a method of making a load resistor of a static random access memory on a dielectric layer of a semiconductor wafer. This method comprises depositing a poly-silicon layer on the dielectric layer, depositing a silicon-oxy-nitride (SiO.sub.X N.sub.Y) layer on the poly-silicon layer, performing a photolithographic process to define an area for making the load resistor, and performing an etching process to remove the silicon-oxy-nitride layer and the poly-silicon layer in all areas except for the area of the load resistor so as to form the load resistor. The poly-silicon layer of the load resistor is used as a conductive resistance layer, and the silicon-oxy-nitride layer of the load resistor is used as a radiation insulating layer for preventing radiation damages of the load resistor caused by plasma radiation in plasma processes to be performed later on.
REFERENCES:
patent: 5330930 (1994-07-01), Chi
patent: 5365104 (1994-11-01), Godinho et al.
patent: 5877059 (1999-03-01), Harward
Dang Trung
Hsu Winston
United Microelectronics Corp.
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