Method of making a dielectric chuck

Details Method of making a dielectric chuck Method of making a dielectric chuck

1995-05-24

1997-06-03

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

279128, 361234, H01R 4300

Patent

active

056342667

ABSTRACT:
A method of making a dielectric chuck for securing a semiconductor wafer on a pedestal having multiple apertures for the introduction of cooling gas beneath the wafer. The wafer is held by electrostatic force against a laminate of an electrode layer sandwiched between two dielectric layers in accordance with the method, such that the laminate presents a planar surface to the wafer for a substantial distance beyond the outer edge of the electrode layer. The laminate construction method ensures that a large wafer area beyond the outer edge of the electrode is in contact with the laminate, to minimize cooling gas leakage near the edge, and provides a longer useful life by increasing the path length of dielectric material between the electrode layer and potentially damaging plasma material surrounding the chuck.

REFERENCES:
patent: 5055964 (1991-10-01), Logan et al.
patent: 5207437 (1993-05-01), Barnes et al.
patent: 5275683 (1994-01-01), Arami et al.
patent: 5382311 (1995-01-01), Ishikawa et al.
patent: 5384682 (1995-01-01), Watanabe et al.
patent: 5452510 (1995-09-01), Barnes et al.

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