Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-01
2005-03-01
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S792000, C438S795000, C118S724000, C118S725000, C118S727000
Reexamination Certificate
active
06861321
ABSTRACT:
One or more of three different measures are taken to preheat a wafer before it is loaded into direct contact with a wafer holder, in order to provide optimal throughput while reducing the risk of thermal shock to the wafer. The first measure is to move the wafer holder to a raised position prior to inserting the wafer into the reaction chamber and holding the wafer above the wafer holder. The second measure is to provide an increased flow rate of a heat-conductive gas (such as Hspurge gas) through the chamber prior to inserting the wafer therein. The third measure is to provide a power bias to radiative heat elements (e.g., heat lamps) above the reaction chamber.
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Hawkins Mark R.
Keeton Tony J.
Stamp Michael R.
ASM America Inc.
Coleman W. David
Knobbe Martens Olson & Bear LLP
Nguyen Khiem
LandOfFree
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