Method of inspecting a leakage current characteristic of a...

Details Method of inspecting a leakage current characteristic of a... Method of inspecting a leakage current characteristic of a...

2007-03-06

2007-03-06

Estrada, Michelle (Department: 2823)

Metal working

Barrier layer or semiconductor device making

C438S014000, C438S015000, C438S017000, C438S018000, C257SE21521, C257SE21524

Reexamination Certificate

active

11175363

ABSTRACT:
A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

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