Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2006-04-11
2006-04-11
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S459000, C257S758000, C257S761000, C438S108000, C438S612000
Reexamination Certificate
active
07026721
ABSTRACT:
This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special interlocking bond pad structure. It is the object of the present invention to provide a process wherein a special grid of interlocking via structures is placed in between the underlying copper pad metal and the top tantalum nitride pad barrier layer providing improved adhesion to the aluminum pad metal stack structure. This unique contact bond pad structure provides for thermal stress relief, improved wire bond adhesion to the aluminum pad, and prevents peeling during wire bond adhesion tests.
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Haynes and Boone LLP
Jr. Carl Whitehead
Mitchell James M.
Taiwan Semiconductor Manufacturing Company , Ltd.
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