Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-22
2000-08-22
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041923, 20419237, 20429809, 20429815, 427574, 427579, C23C 1434
Patent
active
061066788
ABSTRACT:
A gap filling process of depositing a film of SiO.sub.2 in gaps on a substrate by generating plasma in a process chamber by energizing gas containing silicon, oxygen and a heavy noble gas such as xenon or krypton. The gaps can have widths below 0.5 .mu.m and aspect ratios higher than 1.5:1. A substrate is supported on a substrate support wherein a gas passage supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support, and the film is grown in the gaps on the substrate by contacting the substrate with the plasma. The silicon reactant can be SiH.sub.4 and the oxygen reactant can be pure oxygen gas supplied by O.sub.2 /SiH.sub.4 ratio of .ltoreq.1.05. The plasma can be a high density plasma produced in an ECR or TCP reactor and the substrate can be a silicon wafer including aluminum conductor lines.
REFERENCES:
patent: 4698128 (1987-10-01), Berglund et al.
patent: 5089442 (1992-02-01), Olmer
patent: 5279865 (1994-01-01), Chebi et al.
patent: 5416048 (1995-05-01), Blalock et al.
patent: 5571576 (1996-11-01), Qian et al.
patent: 5660740 (1997-08-01), Komino
Shufflebotham Paul Kevin
Weise Mark
Lam Research Corporation
Mercado Julian A.
Nguyen Nam
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