Method of haze-free polishing for semiconductor wafers

Details Method of haze-free polishing for semiconductor wafers Method of haze-free polishing for semiconductor wafers

1988-09-28

1990-11-06

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156903, 134 26, 252 791, H01L 21306

Patent

active

049683810

ABSTRACT:
A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.

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"Modern Silicon Technology" by Herrmann et al., (1975), pp. 302-303.
Kirk-Othmer Encyclopedia of Chemical Technology, 3rd ed., vol. 17, 1982, 26-29 and 34.
Holleman-Wiberg Lehrbuch der Anorganischen Chemie, (1976), p. 297.

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