Method of haze-free polishing for semiconductor wafers

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156651, 156903, 134 26, 252 791, H01L 21306

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active

049683810

ABSTRACT:
A polishing process in which haze-free semiconductor wafers can be obtained in a single-stage process in which an initial phase of the polishing operation is carried out in the usual manner in the alkaline region. This initial stage is followed by a final phase in which polishing is carried out, at a pH of 3 to 7, in the presence of additives in the polishing agent which reduce the amount of material removed by polishing. Consequently, it may be possible to dispense with polishing agent components which act mechanically. Both phases can be carried out on one and the same equipment without interrupting the polishing operation.

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patent: 4837923 (1989-06-01), Brar et al.
"Modern Silicon Technology" by Herrmann et al., (1975), pp. 302-303.
Kirk-Othmer Encyclopedia of Chemical Technology, 3rd ed., vol. 17, 1982, 26-29 and 34.
Holleman-Wiberg Lehrbuch der Anorganischen Chemie, (1976), p. 297.

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