Method of forming vertically offset bond on trace...

Details Method of forming vertically offset bond on trace... Method of forming vertically offset bond on trace...

2011-03-01

2011-03-01

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S612000, C438S613000, C438S617000, C438S508000

Reexamination Certificate

active

07897502

ABSTRACT:
A method of making a semiconductor device comprises forming a first conductive layer recessed below a surface of a substrate. The method further comprises forming a second conductive layer raised above the surface of the substrate to create a vertical offset between the first and second conductive layers. The method further comprises forming an interconnect structure on the first and second conductive layers.

REFERENCES:
patent: 6930257 (2005-08-01), Hiner et al.
patent: 2006/0102694 (2006-05-01), Lee et al.
patent: 2006/0113665 (2006-06-01), Lee et al.
patent: 2006/0194373 (2006-08-01), Fee et al.
patent: 2007/0151756 (2007-07-01), Yamashita et al.
patent: 2007/0235869 (2007-10-01), Jang et al.
patent: 2008/0157358 (2008-07-01), Yang

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