Method of forming ultra shallow junctions

Details Method of forming ultra shallow junctions Method of forming ultra shallow junctions

2006-04-04

2006-04-04

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S529000, C438S305000, C438S306000

Reexamination Certificate

active

07022577

ABSTRACT:
The present invention relates to a method of fabricating a semiconductor device. In specific embodiments, the method comprises providing a semiconductor substrate, and ion implanting dopant impurities over a time period into the semiconductor device by varying an ion energy of implanting the dopant impurities over the time period. The dopant impurities are activation annealed to form one or more doped regions extending below the surface of the semiconductor substrate. The ion energy may be varied continuously or in a stepwise manner over the time period, and may also be varied in a cyclical manner.

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