Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-10-25
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C257SE21655
Reexamination Certificate
active
08043913
ABSTRACT:
A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body region of a second conductivity type in the semiconductor region; and forming a source region of the first conductivity type in the body region, the source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the trench sidewall. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.
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Calafut Daniel
Dolny Gary M.
Grebs Thomas E.
Kocon Christopher Boguslaw
Kraft Nathan L.
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
Pham Thanhha
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