Method of forming silicon oxynitride layer in semiconductor...

Details Method of forming silicon oxynitride layer in semiconductor... Method of forming silicon oxynitride layer in semiconductor...

2007-03-13

2007-03-13

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S775000, C438S474000, C438S798000, C118S7230AN, C257SE21001

Reexamination Certificate

active

11181213

ABSTRACT:
There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction gas to a substrate to be treated after completing the annealing process. The apparatus includes a sealed processing room having gas supply and exhaust lines running thereto. A quartz inner tube and quartz inlet pipe both include holes therethrough, but in orthogonal directions to one another, to flow a reaction gas onto the wafers loaded within the sealed processing room.

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English language abstract of Japanese Publication No. 5-251428.

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