Method of forming silicon on insulator wafers

Details Method of forming silicon on insulator wafers Method of forming silicon on insulator wafers

2005-06-28

2005-06-28

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S151000

Reexamination Certificate

active

06911380

ABSTRACT:
A method is provided for fabricating an SOI water. This may involve forming a silicon substrate and implanting oxygen into the substrate. Damaged portions of the implanted silicon may be healed/cured by CMP or anneal, for example. An epi layer may then be deposited over the healed/cured regions of the substrate. The substrate may then be annealed to form an insulative layer. The wafer may be thinned to provide the proper thickness of the epi layer.

REFERENCES:
patent: 5949108 (1999-09-01), Doyle
patent: 6051452 (2000-04-01), Shigyo et al.
patent: 6228691 (2001-05-01), Doyle
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6624049 (2003-09-01), Yamazaki

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