Method of forming silicon-containing insulation film having...

Details Method of forming silicon-containing insulation film having... Method of forming silicon-containing insulation film having...

2006-10-19

2010-02-02

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S099000, C438S308000, C438S378000, C438S778000, C438S780000, C257S040000, C257S642000, C257SE51007, C257SE51046, C257SE27117

Reexamination Certificate

active

07655577

ABSTRACT:
A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

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Office Action dated Jul. 16, 2008, U.S. Appl. No. 11/550,917, filed Oct. 19, 2006 to Hyodo et al., 14 pages.

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