Method of forming silicon-containing insulation film having...

Details Method of forming silicon-containing insulation film having... Method of forming silicon-containing insulation film having...

2006-12-12

2006-12-12

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07148154

ABSTRACT:
A silicon-containing insulation film is formed on a substrate by plasma polymerization by introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.

REFERENCES:
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patent: 6818570 (2004-11-01), Tsuji et al.
patent: 2003/0100175 (2003-05-01), Nobutoki et al.
patent: 2004/0137757 (2004-07-01), Li et al.
patent: 2004/0152338 (2004-08-01), Gaillard et al.
patent: 2001-274153 (2001-10-01), None
U.S. Appl. No. 10/402,109, filed Mar. 27, 2003, Matsuki et al.
U.S. Appl. No. 10/412,363, filed Apr. 11, 2003, Hyodo et al.
U.S. Appl. No. 10/351,669, filed Jan. 24, 2003, Tsuji et al.

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