Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2005-02-15
2005-02-15
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S485000, C438S535000, C438S707000, C438S714000, C438S726000, C438S765000
Reexamination Certificate
active
06855621
ABSTRACT:
The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.
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Hayashi Ryo
Kondo Takaharu
Sakai Akira
Sano Masafumi
Takai Yasuyoshi
Hogans David L.
Jr. Carl Whitehead
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