Method of forming semiconductor device with capacitor

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S399000, C438S738000

Reexamination Certificate

active

07018903

ABSTRACT:
A method of forming a semiconductor device comprising: sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate; forming an opening by patterning the sacrificial layer and the supporting layer; forming a bottom electrode covering the inner wall and the bottom of the opening; removing the sacrificial layer by a wet etch process; and forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer, wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer.

REFERENCES:
patent: 5310626 (1994-05-01), Fernandes et al.
patent: 5504026 (1996-04-01), Kung
patent: 6500763 (2002-12-01), Kim et al.
patent: 6624018 (2003-09-01), Yu et al.
patent: 6653186 (2003-11-01), Won et al.
patent: 2003/0032238 (2003-02-01), Kim et al.
patent: 2004/0009662 (2004-01-01), Park et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Second edition, Lattice Press, 2000, p. 193.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming semiconductor device with capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor device with capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device with capacitor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3576981

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.