Method of forming semiconductor device with capacitor

Details Method of forming semiconductor device with capacitor Method of forming semiconductor device with capacitor

2006-03-28

2006-03-28

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S399000, C438S738000

Reexamination Certificate

active

07018903

ABSTRACT:
A method of forming a semiconductor device comprising: sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate; forming an opening by patterning the sacrificial layer and the supporting layer; forming a bottom electrode covering the inner wall and the bottom of the opening; removing the sacrificial layer by a wet etch process; and forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer, wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer.

REFERENCES:
patent: 5310626 (1994-05-01), Fernandes et al.
patent: 5504026 (1996-04-01), Kung
patent: 6500763 (2002-12-01), Kim et al.
patent: 6624018 (2003-09-01), Yu et al.
patent: 6653186 (2003-11-01), Won et al.
patent: 2003/0032238 (2003-02-01), Kim et al.
patent: 2004/0009662 (2004-01-01), Park et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 1, Second edition, Lattice Press, 2000, p. 193.

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