Method of forming semiconductor device containing...

Details Method of forming semiconductor device containing... Method of forming semiconductor device containing...

2005-07-05

2005-07-05

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S787000, C438S263000, C438S264000

Reexamination Certificate

active

06914013

ABSTRACT:
A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor device includes: a semiconductor substrate; a patterned floating gate formed on the semiconductor substrate, the patterned floating gate having upper and side parts and corners; and a dielectric layer containing a first oxide layer, a nitride layer and a second oxide layer deposited over the semiconductor substrate and the floating gate. The ratio of the thickness of the first oxide layer in the upper and side parts of the patterned floating gate to the thickness of the first oxide layer in the corners of the patterned floating gate does not exceed 1.4. The semiconductor device has an improved coupling coefficient, and reduced leakage current.

REFERENCES:
patent: 5972750 (1999-10-01), Shirai et al.
patent: 6163049 (2000-12-01), Bui
patent: 6248628 (2001-06-01), Halliyal et al.
patent: 6358864 (2002-03-01), Chang et al.
patent: 6380033 (2002-04-01), He et al.
Shimizu, K., et al. “A Novel High-Density 5F2 NAND STI Cell Technology Suitable for 256Mbit and 1Gbit Flash Memories”, 1997, IEDM 97, pp. 271-274.

Affiliated with

Also associated with

Rating

Method of forming semiconductor device containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming semiconductor device containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming semiconductor device containing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3369884