Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-13
2009-06-23
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S201000, C438S287000, C438S769000, C438S773000, C438S775000, C257SE21180
Reexamination Certificate
active
07550353
ABSTRACT:
One embodiment of a method for forming a semiconductor device can include forming a gate pattern on a semiconductor substrate and performing a selective re-oxidation process on the gate pattern in gas ambient including hydrogen, oxygen, and nitrogen. When the gate pattern includes a tunnel insulation layer, a metal nitride layer and a metal layer, the selective re-oxidation process heals the etching damage of a gate pattern and simultaneously prevents oxidation of the metal nitride layer and a tungsten electrode.
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English language abstract of Korean Publication No. 2005-0003533.
English language abstract of Korean Publication No. 2006-0041553.
Choi Gil-Heyun
Kim Byung-Hee
Lee Byung-Hak
Park Hee-Sook
Park Jae-Hwa
Fourson George
Marger & Johnson & McCollom, P.C.
Parker John M
Samsung Electronics Co,. Ltd.
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