Method of forming salicide poly gate with thin gate oxide and ul

Details Method of forming salicide poly gate with thin gate oxide and ul Method of forming salicide poly gate with thin gate oxide and ul

1998-10-23

2000-12-26

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, H01L 214763

Patent

active

061658812

ABSTRACT:
I A method is achieved for removing a hardmask from a feature on a semiconductor wafer. The method comprises the following phases: depositing a buffer layer overall; etching back the buffer layer in an etching apparatus to expose the hardmask; etching the hardmask in the etching apparatus; and etching of the remaining buffer layer in the etching apparatus.

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patent: 5061647 (1991-10-01), Roth et al.
patent: 5372673 (1994-12-01), Stager et al.
patent: 5431770 (1995-07-01), Lee et al.
patent: 5837588 (1998-11-01), Wu
patent: 5968336 (1999-10-01), Rolferson
patent: 5985761 (1999-11-01), Sparks et al.

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