Method of forming resist patterns in negative photoresist layer

Details Method of forming resist patterns in negative photoresist layer Method of forming resist patterns in negative photoresist layer

1985-02-19

1986-04-08

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 5, 430 22, 430311, 430312, 430325, 430329, 430396, 430494, 430952, 430967, 430269, G03F 726, H01L 2100

Patent

active

045813167

ABSTRACT:
In a method of forming very minute real window patterns to a negative photoresist film that are required in the manufacture of highly packed semiconductor devices, false unexposed patterns are formed in the proximity of the minute real unexposed patterns. The false patterns have a width that, upon a single exposure of the negative photoresist film to ultraviolet light or other energy beam, the photoresist film portion immediately below the false patterns are unexposed but a photoresist portion under the unexposed portion is exposed to light by reason of light diffraction or light circling around under the false pattern. As a result, the false patterns in the photoresist film substantially disappear after development of the photoresist. The partially removed false patterns serve to negate swelling of the photoresist at the time of development and prevent obliteration of the real window patterns or formation of burr-like parts where the real window patterns are to be formed.

REFERENCES:
patent: 2039412 (1936-05-01), Heise
patent: 3249436 (1966-05-01), Halpern
patent: 3403024 (1968-09-01), Luce
patent: 3653898 (1972-04-01), Show
patent: 4256829 (1981-03-01), Daniel

Affiliated with

Also associated with

Rating

Method of forming resist patterns in negative photoresist layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming resist patterns in negative photoresist layer , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming resist patterns in negative photoresist layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2065966