Semiconductor laser and production method thereof

Details Semiconductor laser and production method thereof Semiconductor laser and production method thereof

1996-07-19

1998-04-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 13, 257103, H01S 319

Patent

active

057426295

ABSTRACT:
A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

REFERENCES:
patent: 5268918 (1993-12-01), Akimoto et al.
patent: 5278856 (1994-01-01), Migita et al.
patent: 5375134 (1994-12-01), Okuyama et al.
patent: 5521934 (1996-05-01), Fitzpatrick

Affiliated with

Also associated with

Rating

Semiconductor laser and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser and production method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2065967