Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1994-03-04
1996-04-30
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
4302721, 4302731, 430313, 430510, 430945, 522 75, G03C 500
Patent
active
055124224
ABSTRACT:
Methods of forming a resist pattern allow the size of the resist pattern to be controlled in its formation, and the size of the underlying substrate to be controlled in etching the same even with a step portion existing on the substrate. The methods of forming a resist pattern on a substrate by lithography use far-ultra violet light. An organic silane compound for forming an anti reflection film on the surface of a substrate includes a silicon atom, a leaving group bound to the silicon atom and replaceable with an hydroxyl group existing in the surface of the semiconductor substrate to bind covalently the semiconductor substrate and the organic silane compound, and a substituent group absorbing the far-ultra violet light. The substrate is coated with the organic silane compound. Resist is applied onto the substrate coated with the organic silane compound. The resist is exposed selectively using far-ultra violet light, and then developed.
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Lamola et al, Chemically Amplified Resists, Solid State Technology; Aug. 1991 pp. 53-60.
de Beeck Maria O.
Hanawa Tetsuro
Codd Bernard P.
McCamish Marion E.
Mitsubishi Denki & Kabushiki Kaisha
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