Method of forming resist pattern and method of manufacturing...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S330000

Reexamination Certificate

active

07727709

ABSTRACT:
The present invention improves the OPE characteristic generated by the difference between sparse and dense mask patterns and promotes fidelity in the design of the pattern. Because of this, the present invention includes a step of forming a resist having an acid dissociative dissolution suppression group on a substrate, a step of coating the resist with an acid polymer dissolved in an alcohol based solvent and forming an upper layer film, a step of exposing through a mask, a step of performing a baking process, and a step of processing with an alkali developer, and wherein in the step of performing a baking process, a mixing layer is formed on the resist by the upper layer film and in which a thicker mixing layer is formed in an unexposed part of a region where the pattern density of the mask pattern is high compared to a region where the pattern density is low.

REFERENCES:
patent: 2007/0134593 (2007-06-01), Hirayama et al.
patent: 7-295228 (1995-11-01), None
patent: 8-15859 (1996-01-01), None
Jeng-Horng Chen et al., “Characterization of ArF immersion process for production,” Optical Microlithography XVIII, edited by Bruce W. Smith, Proceedings of the SPIE 2005, vol. 5754, pp. 13-22.

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