Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-18
2006-07-18
Parekh, Nitin (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S666000, C438S669000, C438S613000, C257SE23021, C257SE23168
Reexamination Certificate
active
07078331
ABSTRACT:
Provided are a method of forming a bump whose upper surface is substantially flat and whose area can be enlarged in a uniform pad pitch to simplify mounting a liquid crystal display drive IC (LDI) and a semiconductor chip and a mount structure using the method to minimize a pad area inside the chip. Thus, the pad area on an edge of a conventional chip is minimized and the bump is formed in a substantially flat location inside the chip and an electrical connection between the pad and the bump is performed by a redistribution metal line.
REFERENCES:
patent: 5834844 (1998-11-01), Akagawa et al.
patent: 6329608 (2001-12-01), Rinne et al.
patent: 6362087 (2002-03-01), Wang et al.
patent: 2001-009429 (2001-02-01), None
English language abstract of the Korea Publication No. 2001-0009429.
Kang Sa-Yoon
Kwon Yong-Hwan
Lee Chung-Sun
Parekh Nitin
Samsung Electronics Co,. Ltd.
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