Method of forming poly plug to reduce buried contact series resi

Details Method of forming poly plug to reduce buried contact series resi Method of forming poly plug to reduce buried contact series resi

1996-08-29

1997-09-16

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438657, 438684, H01L 2128

Patent

active

056680511

ABSTRACT:
A new method of forming improved buried contact junctions is described. A first layer of polysilicon is deposited overlying a gate silicon oxide layer on a semiconductor substrate. These layers are etched away to provide an opening to the semiconductor substrate where the planned buried contact junction will be formed. A second polysilicon layer is deposited overlying the first polysilicon layer and the planned buried contact junction. Dopant is driven in from the second polysilicon layer to form the buried contact junction. The second polysilicon layer is etched away to provide a polysilicon contact overlying the buried contact junction and providing an opening to the semiconductor substrate where a planned source/drain region will be formed adjacent to the buried contact junction wherein a portion of the second polysilicon layer remains as residue. The residue is etched away whereby a trench is etched into the substrate at the junction of the planned source/drain region and the buried contact junction. A doped third polysilicon layer is deposited overlying the polysilicon contact and within the trench. The doped third polysilicon layer is etched away leaving the doped third polysilicon layer on the sidewall of the polysilicon contact and within the trench. The planned source/drain region is formed wherein a conduction channel between the source/drain region and the buried contact junction is provided by the doped third polysilicon layer within the trench.

REFERENCES:
patent: 5049518 (1991-09-01), Fuse et al.
patent: 5494848 (1996-02-01), Chin
patent: 5525552 (1996-06-01), Huang
patent: 5550085 (1996-08-01), Liu
patent: 5576242 (1996-11-01), Liu
patent: 5607881 (1997-03-01), Huang

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