Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-02
2008-12-02
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S233000
Reexamination Certificate
active
07459360
ABSTRACT:
A method of forming a pixel sensor cell structure. The method of forming the pixel cell comprises forming a doped layer adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier interference to charge transfer caused by a pinning layer is reduced.
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Adkisson James W.
Bryant Andres
Ellis-Monaghan John
Gambino Jeffrey P.
Jaffe Mark D.
Canale Anthony J.
International Business Machines - Corporation
Le Thao P.
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