Method of forming nonvolatile memory device having floating...

Details Method of forming nonvolatile memory device having floating... Method of forming nonvolatile memory device having floating...

2011-02-15

2011-02-15

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C257SE21304

Reexamination Certificate

active

07888204

ABSTRACT:
A method of manufacturing a non-volatile memory device is provided. The method includes forming isolation patterns defining an active region on a substrate, forming a floating gate pattern on the active region, and forming a gate line on the floating gate pattern. The floating gate pattern is self-aligned on the active region and has an impurity ion concentration that becomes relatively low as the floating gate pattern gets nearer to the active region.

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