Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-10-22
2010-10-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S791000, C438S792000, C257S321000, C257S324000
Reexamination Certificate
active
07816205
ABSTRACT:
A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
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Al-Bayati Amir
Arghavani Reza
Balseanu Mihaela
Noori Atif
Witty Derek R.
Applied Materials Inc.
Janah Ashok K.
Janah & Associates
Jung Michael
Richards N Drew
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