Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-10-17
2009-02-17
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S792000, C427S255230, C427S255260, C427S255270
Reexamination Certificate
active
07491660
ABSTRACT:
A method is provided for making a FET device in which a nitride layer overlies the PFET gate structure, where the nitride layer has a compressive stress with a magnitude greater than about 2.8 GPa. This compressive stress permits improved device performance in the PFET. The nitride layer is deposited using a high-density plasma (HDP) process, wherein the substrate is disposed on an electrode to which a bias power in the range of about 50 W to about 500 W is supplied. The bias power is characterized as high-frequency power (supplied by an RF generator at 13.56 MHz). The FET device may also include NFET gate structures. A blocking layer is deposited over the NFET gate structures so that the nitride layer overlies the blocking layer; after the blocking layer is removed, the nitride layer is not in contact with the NFET gate structures. The nitride layer has a thickness in the range of about 300-2000 Å.
REFERENCES:
patent: 6091121 (2000-07-01), Oda
patent: 6140255 (2000-10-01), Ngo et al.
patent: 6573172 (2003-06-01), En et al.
patent: 6617690 (2003-09-01), Gates et al.
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 2005/0003671 (2005-01-01), Liu et al.
patent: 2005/0202653 (2005-09-01), Joshi et al.
Bourque Ronald P.
Conti Richard A.
Klymko Nancy R.
Madan Anita
Smits Michael C.
Brown Valerie
Cai Yuanmin
International Business Machines - Corporation
Nguyen Ha Tran T
Novellus Systems. Inc.
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