Method of forming narrow thermal silicon dioxide side isolation

Details Method of forming narrow thermal silicon dioxide side isolation Method of forming narrow thermal silicon dioxide side isolation

1997-09-05

1999-09-21

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, H01L 21336

Patent

active

059565896

ABSTRACT:
A method is disclosed for forming narrow thermal silicon dioxide side isolation regions in a semiconductor substrate and MOS or CMOS semiconductor devices fabricated by this method. A thin oxynitride lateral diffusion barrier to oxygen is used in conjunction with a polysilicon buffering stress relief layer on the surface of a semiconductor substrate prior to the field oxidation process to restrict lateral silicon dioxide expansion thereby permitting the creation of narrow thermal silicon dioxide side isolation regions in the semiconductor substrate.

REFERENCES:
patent: 4534824 (1985-08-01), Chen
patent: 4871685 (1989-10-01), Taka et al.
patent: 5580815 (1996-12-01), Hsu et al.

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