Method of forming nanowire and method of manufacturing...

Details Method of forming nanowire and method of manufacturing... Method of forming nanowire and method of manufacturing...

2011-04-19

2011-04-19

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S197000, C438S694000, C438S933000, C257S401000, C257SE21404, C257SE29245, C977S747000, C977S762000, C977S938000

Reexamination Certificate

active

07928017

ABSTRACT:
A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-ylayer (where, y is a real number that satisfies 0≦y<1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiyGe1-ylayer.

REFERENCES:
patent: 2008/0042120 (2008-02-01), Shibata et al.
patent: 2008/0050918 (2008-02-01), Damlencourt
patent: 2008/0116490 (2008-05-01), Stewart et al.
patent: 2008/0135949 (2008-06-01), Lo et al.

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