Method of forming multiple gate insulators on a strained...

Details Method of forming multiple gate insulators on a strained... Method of forming multiple gate insulators on a strained...

2007-02-06

2007-02-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S762000, C438S763000, C257SE27064

Reexamination Certificate

active

11015266

ABSTRACT:
A method for forming multiple gate insulators on a strained semiconductor heterostructure, including the steps of oxidation and deposition.

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International Search Report for International Patent Application No. PCT/US02/17981, dated Oct. 15, 2002, 7 pages.
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