Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-28
2009-10-20
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S789000, C257SE21006
Reexamination Certificate
active
07605094
ABSTRACT:
In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,in-line-formulae description="In-line Formulae" end="lead"?M[L1]x[L2]yin-line-formulae description="In-line Formulae" end="tail"?where M represents a metal, L1and L2respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
REFERENCES:
patent: 6509280 (2003-01-01), Choi
patent: 6620670 (2003-09-01), Song et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
Cho Jun-Hyun
Choi Jung-Sik
Chon Sang-Mun
Lee Jung-Ho
F. Chau & Associates LLC
Kebede Brook
Samsung Electronics Co,. Ltd.
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