Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-31
2010-12-21
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000, C438S669000, C438S687000
Reexamination Certificate
active
07855144
ABSTRACT:
Provided is a method of forming conductors (e.g., metal lines and/or bumps) for semiconductor devices and conductors formed from the same. First and second seed metal layers may be formed. At least one mask may be formed on a portion on which a conductor is to be formed. An exposed portion may be oxidized. The oxidized portion may be removed. A conductive structure may be formed on an upper surface of a portion which is not oxidized. The conductors may be metal lines and/or bumps. The conductive structures may be solder balls.
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patent: 2003/0146520 (2003-08-01), Fang
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Korean Office Action dated Jun. 20, 2007.
Chung Jae-sik
Jang Dong-hyeon
Kim Soon-bum
Oh Se-yong
Sim Sung-min
Harness & Dickey & Pierce P.L.C.
Picardat Kevin M
Samsung Electronics Co,. Ltd.
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