Method of forming isolated features of semiconductor devices

Details Method of forming isolated features of semiconductor devices Method of forming isolated features of semiconductor devices

2007-08-21

2007-08-21

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S689000, C257SE21023

Reexamination Certificate

active

11062722

ABSTRACT:
A method of forming isolated features of semiconductor devices is disclosed. A first hard mask is deposited over a material layer to be patterned, and a second hard mask is deposited over the first hard mask. The second hard mask is patterned with a pattern for an array of features using an off-axis lithography method. A portion of the pattern for the array of features is transferred to the first hard mask. The first hard mask is then used as a mask to pattern the material layer.

REFERENCES:
patent: 6518151 (2003-02-01), Dobuzinsky et al.
patent: 2003/0032269 (2003-02-01), Dobuzinsky et al.
patent: 2004/0209486 (2004-10-01), Naeem et al.
patent: 2005/0130410 (2005-06-01), Oweyang et al.

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