Method of forming high dielectric film using atomic layer...

Details Method of forming high dielectric film using atomic layer... Method of forming high dielectric film using atomic layer...

2008-07-08

2008-07-08

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C438S785000, C257SE21625

Reexamination Certificate

active

07396719

ABSTRACT:
A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

REFERENCES:
patent: 6607973 (2003-08-01), Jeon
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0198069 (2004-10-01), Metzner et al.
patent: 2001-0063452 (2001-07-01), None
patent: 2002-0002156 (2002-01-01), None
patent: 2000-0013654 (2003-03-01), None

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